Oxygen uptake of InN thin films as determined by ion beam analysis
Identifieur interne : 007363 ( Main/Repository ); précédent : 007362; suivant : 007364Oxygen uptake of InN thin films as determined by ion beam analysis
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Abstract
All as-grown InN is n-type, with carrier concentrations typically in the range of 1018-1020 cm-3. Whether the native carrier concentration is attributable to defects, oxygen impurities, or other causes has yet to be determined. We have employed nondestructive ion beam analysis techniques to study both layer stoichiometry and oxygen content in a series of InN films grown by plasma-assisted molecular beam epitaxy on a variety of substrates. We show that not only does the InN surface readily oxidise, but a significant amount of oxygen can be drawn from the substrate as well.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Oxygen uptake of InN thin films as determined by ion beam analysis</title><author><name sortKey="Durbin, S M" uniqKey="Durbin S">S. M. Durbin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Canterbury</s1><s2>Christchurch</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Christchurch</wicri:noRegion></affiliation></author><author><name sortKey="Anderson, P A" uniqKey="Anderson P">P. A. Anderson</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Canterbury</s1><s2>Christchurch</s2><s3>NZL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>Christchurch</wicri:noRegion></affiliation></author><author><name sortKey="Markwitz, A" uniqKey="Markwitz A">A. Markwitz</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>GNS Science</s1><s2>Lower Hutt</s2><s3>NZL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>GNS Science</wicri:noRegion></affiliation></author><author><name sortKey="Kennedy, J" uniqKey="Kennedy J">J. Kennedy</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>GNS Science</s1><s2>Lower Hutt</s2><s3>NZL</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Nouvelle-Zélande</country><wicri:noRegion>GNS Science</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0298025</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0298025 INIST</idno><idno type="RBID">Pascal:07-0298025</idno><idno type="wicri:Area/Main/Corpus">007B23</idno><idno type="wicri:Area/Main/Repository">007363</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Experimental design</term><term>III-V compound</term><term>Indium nitrides</term><term>Ion beams</term><term>Molecular beam epitaxy</term><term>Plasma assisted processing</term><term>RBS</term><term>Stoichiometry</term><term>Thin films</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Composé III-V</term><term>Couche mince</term><term>Faisceau ion</term><term>Densité porteur charge</term><term>Stoechiométrie</term><term>Traitement par plasma</term><term>Epitaxie jet moléculaire</term><term>Plan expérience</term><term>RBS</term><term>Indium nitrure</term><term>In N</term><term>InN</term><term>5277</term><term>8115H</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">All as-grown InN is n-type, with carrier concentrations typically in the range of 101<sup>8</sup>-10<sup>20</sup> cm<sup>-3</sup>. Whether the native carrier concentration is attributable to defects, oxygen impurities, or other causes has yet to be determined. We have employed nondestructive ion beam analysis techniques to study both layer stoichiometry and oxygen content in a series of InN films grown by plasma-assisted molecular beam epitaxy on a variety of substrates. We show that not only does the InN surface readily oxidise, but a significant amount of oxygen can be drawn from the substrate as well.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>515</s2></fA05><fA06><s2>7-8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Oxygen uptake of InN thin films as determined by ion beam analysis</s1></fA08><fA11 i1="01" i2="1"><s1>DURBIN (S. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>ANDERSON (P. 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